Jeremy Rashid, Ph.D. is an experienced U.S. patent agent in the firm’s Intellectual Property practice. His work includes inter partes and ex parte proceedings before the Patent Trial and Appeals Board (PTAB), and assisting with patent infringement and validity, due diligence and freedom-to-operate analyses.

Dr. Rashid has a Ph.D. in electronics and semiconductor devices. He draws on his deep technical knowledge based on his doctoral research focused on wide bandgap semiconductor physics and devices, and high temperature electronic packaging for automotive applications, as well as his masters research focused on silicon carbide power semiconductor devices.

Dr. Rashid serves his clients by drawing on his technical and legal acumen developed in more than a decade in engineering and law.  His experience enables him to take a client centric approach leading him to become a trusted advisor in the high tech industry.  Dr. Rashid represents clients having technologies that include semiconductor devices, automotive electronics, memory systems, satellite and defense technologies, computer-implemented inventions including natural language processing, machine learning and artificial intelligence, and business transaction systems. He is also experienced in medical device technologies, having worked on a large portfolio of multi-jurisdictional cases dealing with endosurgical tools, ultrasonic cauterization equipment, suturing tools, medical imaging systems, analyte test meters, stent technology, wound dressings, irrigation systems and diagnostic tools.

Dr. Rashid is qualified as a European patent attorney and is a U.S. patent agent. He is not an U.K.-licensed solicitor or a U.S.-licensed attorney.

Published Work

• Lead Author, “Numerical parameterization of CVD single crystal diamond,” IEEE Transactions on Electron Devices, 2008, vol. 55, pp. 2744‐56.
• Lead Author, “δ‐Doped Single Crystal Diamond Schottky m‐i‐p+ Diodes,” 2008, IEEE Power Semiconductor Devices and ICs, 2008, pp. 249‐52.
• Co-Author, “Novel Packaging Techniques for High Power Electronics in SiC,” Material Science Forum, 2007, vols. 556‐557, pp. 971‐74.
• Co-Author, “High Temperature Direct Cooled Inverter Module for Hybrid Electric Vehicle Application,” Material Science Forum, 2007, vols. 556‐557, pp. 709‐12.

Published Work, continued

• Co-Author, “Optically Triggered Schottky Barrier Diodes in Single Crystal Diamond,” Journal of Diamond and Related Materials, 2005, vol. 14, pp. 499‐503.
• Lead Author, “Trench oxide protection for 10kV 4H‐SiC trench MOSFETs,” IEEE Power Electronics and Drive Systems, 2003, vol. 2, pp. 1354‐58.

Patents

• Co-Inventor, “Power electronic package having two substrates with multiple semiconductor chips and interconnections,” U.S. Patent Nos. 7,999,369, 7,557,434, 8,432,030, U.K. Patent Nos. 2,485,087, 2,444,978, 2,444,293, German Patent Nos. 102006040838, 102006040820, Japan Patent No. 5,374,831
• Co-Inventor, “Switching device,” U.S. Patent No. 8,053,783, European Patent No. 1,803,161, Japan Patent No. 5,060,297
• Co-Inventor, “Wide band gap semiconductor device including junction field effect transistor,” U.S. Patent No. 8,274,086, Japan Patent No. 5,326,405
• Co-Inventor, “Gate wiring layout for silicon‐carbide‐based junction field effect transistor,” U.S. Patent Nos. 7,164,154, 7,821,013, Japan Patent No. 4,179,147

• Suffolk University Law School, J.D., 2024 (expected)
• Queen Mary University of London, Cert. Intellectual Property, 2009
• University of Cambridge, Ph.D., Electrical Engineering, 2007
• University of Cambridge, M.Phil., Electrical Engineering, 2003
• National University of Singapore, B.Eng., Electrical Engineering, 2002